JOURNAL ARTICLE
23 GHz monolithically integrated InP/InGaAs PIN/HBT-receiver with 12 THzΩ gain-bandwidth product
Abstract
We report on the design, fabrication and characterization of a monolithically integrated InP/InGaAs PIN/HBT-photoreceiver for a wavelength of /spl lambda/=1.55 /spl mu/m. The three-stage-amplifier achieves a transimpedance of 54.5 dB/spl Omega/ (530 /spl Omega/) and the optical/electrical -3dB-bandwidth of the entire receiver is 23 GHz. This corresponds to a transimpedance-bandwidth product of 12 THz/spl Omega/, which is one of the highest values published to date.
Keywords:
Transimpedance amplifier Heterojunction bipolar transistor Bandwidth (computing) Optoelectronics Fabrication Gain–bandwidth product Terahertz radiation Omega Gallium arsenide Amplifier Materials science Indium phosphide Lambda Optics Physics Electrical engineering Telecommunications Computer science Operational amplifier Engineering Voltage Transistor Bipolar junction transistor
Metrics
2
Cited By
0.31
FWCI (Field Weighted Citation Impact)
8
Refs
0.52
Citation Normalized Percentile
Is in top 1%
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Topics
Photonic and Optical Devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Radio Frequency Integrated Circuit Design
Physical Sciences → Engineering → Electrical and Electronic Engineering
Semiconductor Quantum Structures and Devices
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
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