JOURNAL ARTICLE
50 GHz monolithically integrated InP/InGaAs PIN/HBT-receiver
Abstract
We have designed and fabricated a monolithically integrated InP/InGaAs PIN/HBT-photoreceiver for a wavelength of /spl lambda/=1.55 /spl mu/m. The transimpedance amplifier achieves a gain of 44.6 dB/spl Omega/ 170 /spl Omega/, and the optical/electrical -3 dB-bandwidth of the entire receiver is 50 GHz, the largest bandwidth reported for any long-wavelength receiver OEIC.
Keywords:
Transimpedance amplifier Heterojunction bipolar transistor Optoelectronics Gallium arsenide Bandwidth (computing) Wavelength Materials science Indium phosphide Omega Amplifier Lambda Optics Electrical engineering Physics Telecommunications Operational amplifier Engineering Voltage Bipolar junction transistor Transistor CMOS
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7
Cited By
0.63
FWCI (Field Weighted Citation Impact)
3
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0.73
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Citation History
Topics
Photonic and Optical Devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Advanced Photonic Communication Systems
Physical Sciences → Engineering → Electrical and Electronic Engineering
Semiconductor Lasers and Optical Devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
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