Monolithic InGaAs-InP p-i-n/HBT 40-Gb/s optical receiver module

Abstract

A fully packaged 40-Gb/s optical receiver module based on monolithic integration of p-i-n photodiodes and single-heterojunction bipolar transistors (HBT) in the InGaAs-InP material system is presented. Combined with an electrical broad-band mounting technique the optical receiver module achieved an overall conversion gain of 48 V/W and showed clearly opened eyes for data rates of 40 Gb/s at a wavelength of 1550 nm.