JOURNAL ARTICLE
Large Size Dislocation-Free Gallium Arsenide Single Crystals for LSI Applications
Abstract
Large size 3 and 4-inch diameter dislocation-free GaAs single crystals with high electrical uniformity were successfully grown by a vertical magnetic-field-applied fully encapsulated Czochralski technique combined with Indoping. It was found experimentally that the crystals grown from As-rich melt with low boron concentration exhibited high activation efficiency of implanted Si.
Keywords:
Gallium arsenide Dislocation Materials science Optoelectronics Composite material
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Topics
Semiconductor materials and interfaces
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Advanced Semiconductor Detectors and Materials
Physical Sciences → Engineering → Electrical and Electronic Engineering
Semiconductor Quantum Structures and Devices
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
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