JOURNAL ARTICLE

Growth of Gallium Arsenide Single Crystals by Free Surface Method

Kazuhiro KurataJunji ShirafujiTakao Endo

Year: 1963 Journal:   Japanese Journal of Applied Physics Vol: 2 (1)Pages: 64-64   Publisher: Institute of Physics
Keywords:
Gallium arsenide Materials science Surface (topology) Optoelectronics Mathematics Geometry

Metrics

7
Cited By
0.85
FWCI (Field Weighted Citation Impact)
2
Refs
0.73
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Topics

Semiconductor materials and interfaces
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Chalcogenide Semiconductor Thin Films
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

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