Dislocation reduction in heavily doped gallium arsenide single crystals

G. Attolini; R. Fornari; C. Paorici; L. Zanotti

doi:10.1107/s0108767384093909

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Dislocation reduction in heavily doped gallium arsenide single crystals

G. Attolini R. Fornari C. Paorici L. Zanotti

Year: 1984 Journal: Acta Crystallographica Section A Foundations of Crystallography Vol: 40 (a1)Pages: C200-C200 Publisher: Wiley

DOI: 10.1107/s0108767384093909

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Abstract

An.optimization of observed X-ray intensities is necessary to obtain a good correlation between theoretical work and experiments : this is possible for layers showing 10 to 20 fringes with different p0sition and intensity.

Keywords:

Gallium arsenide Doping Materials science Reduction (mathematics) Dislocation Gallium Optoelectronics Composite material Metallurgy Mathematics Geometry

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Advanced Semiconductor Detectors and Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Dislocation reduction in heavily doped gallium arsenide single crystals

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