Mobility in heavily doped gallium arsenide

C. Gooch

doi:10.1016/0031-9163(65)90575-5

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Mobility in heavily doped gallium arsenide

C. Gooch

Year: 1965 Journal: Physics Letters Vol: 14 (3)Pages: 183-184 Publisher: Elsevier BV

DOI: 10.1016/0031-9163(65)90575-5

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Keywords:

Homojunction Light-emitting diode Quantum efficiency Carrier generation and recombination Optoelectronics Physics Heterojunction Spontaneous emission Quantum well Radiative transfer Saturation current Optics Semiconductor Quantum mechanics

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Mobility in heavily doped gallium arsenide

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