JOURNAL ARTICLE

Device-related material properties of heavily doped gallium arsenide

Keywords:
Gallium arsenide Doping Materials science Gallium Optoelectronics Metallurgy

Metrics

43
Cited By
3.18
FWCI (Field Weighted Citation Impact)
62
Refs
0.93
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Advancements in Semiconductor Devices and Circuit Design
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

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DISSERTATION

Absorption coefficient of heavily doped gallium arsenide.

W. Sritrakool

University:   uO Research (University of Ottawa) Year: 1984
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