JOURNAL ARTICLE
Device-related material properties of heavily doped gallium arsenide
Mark LundstromM. E. Klausmeier-BrownM. R. MellochR. K. AhrenkielB. M. Keyes
Year: 1990 Journal: Solid-State Electronics Vol: 33 (6)Pages: 693-704 Publisher: Elsevier BV
Keywords:
Gallium arsenide Doping Materials science Gallium Optoelectronics Metallurgy
Metrics
43
Cited By
3.18
FWCI (Field Weighted Citation Impact)
62
Refs
0.93
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Citation History
Topics
Semiconductor Quantum Structures and Devices
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Advancements in Semiconductor Devices and Circuit Design
Physical Sciences → Engineering → Electrical and Electronic Engineering
Semiconductor materials and devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
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