JOURNAL ARTICLE
Phase Transition in Heavily Doped Gallium Arsenide
В. В. ПрудниковIrina A. PrudnikovaН. А. Семиколенова
Year: 1994 Journal: physica status solidi (b) Vol: 181 (1)Pages: 87-96 Publisher: Wiley
Abstract
Abstract The results of investigation of GaAs single crystals heavily doped by group VI elements are considered. The doping effects are studied by methods of free carrier infrared absorption, photoluminescence, ultrasonic, and calorimetric methods. For the explanation of the observed peculiarities in doped gallium arsenide the thermodynamic model of phase transitions is proposed using the properties of complex formation in this semiconducting compound.
Keywords:
Gallium arsenide Doping Gallium Materials science Photoluminescence Phase transition Absorption (acoustics) Free carrier Phase (matter) Condensed matter physics Optoelectronics Chemical physics Chemistry Physics Metallurgy
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Topics
Advanced Semiconductor Detectors and Materials
Physical Sciences → Engineering → Electrical and Electronic Engineering
Semiconductor Quantum Structures and Devices
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Chalcogenide Semiconductor Thin Films
Physical Sciences → Engineering → Electrical and Electronic Engineering
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