JOURNAL ARTICLE
Dislocation mobility in heavily doped silicon single crystals
Year: 1970 Journal: Metallurgical Transactions Vol: 1 (3)Pages: 651-658 Publisher: Springer Nature
Keywords:
Dislocation Dopant Silicon Materials science Dislocation creep Doping Germanium Condensed matter physics Deformation (meteorology) Electron mobility Crystallography Composite material Metallurgy Optoelectronics Chemistry Physics
Metrics
5
Cited By
0.49
FWCI (Field Weighted Citation Impact)
17
Refs
0.58
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Topics
Force Microscopy Techniques and Applications
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Silicon and Solar Cell Technologies
Physical Sciences → Engineering → Electrical and Electronic Engineering
Semiconductor materials and interfaces
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
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