JOURNAL ARTICLE

Dislocation mobility in heavily doped silicon single crystals

A. D. PaddockS.H. Carpenter

Year: 1970 Journal:   Metallurgical Transactions Vol: 1 (3)Pages: 651-658   Publisher: Springer Nature
Keywords:
Dislocation Dopant Silicon Materials science Dislocation creep Doping Germanium Condensed matter physics Deformation (meteorology) Electron mobility Crystallography Composite material Metallurgy Optoelectronics Chemistry Physics

Metrics

5
Cited By
0.49
FWCI (Field Weighted Citation Impact)
17
Refs
0.58
Citation Normalized Percentile
Is in top 1%
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Topics

Force Microscopy Techniques and Applications
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Silicon and Solar Cell Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Semiconductor materials and interfaces
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics

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