JOURNAL ARTICLE
The initial stages of NiSi2 epitaxy on clean Si(111), Si(100) and Si(110) surfaces
A.E. DolbakB.Z. OlshanetskyS.I. SteninS.A. TeysT.A. Gavrilova
Year: 1991 Journal: Surface Science Letters Vol: 247 (1)Pages: A198-A198 Publisher: Elsevier BV
Keywords:
Epitaxy Materials science Silicon Chemical engineering Optoelectronics Nanotechnology Layer (electronics) Engineering
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Topics
Semiconductor materials and interfaces
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Surface and Thin Film Phenomena
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Silicon and Solar Cell Technologies
Physical Sciences → Engineering → Electrical and Electronic Engineering
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