The initial stages of NiSi2 epitaxy on clean Si(111), Si(100) and Si(110) surfaces

А. Е. Dolbak; B.Z. Olshanetsky; S. I. Stenin; S. A. Teys; Т. А. Гаврилова

doi:10.1016/0039-6028(91)90192-u

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The initial stages of NiSi2 epitaxy on clean Si(111), Si(100) and Si(110) surfaces

А. Е. Dolbak B.Z. Olshanetsky S. I. Stenin S. A. Teys Т. А. Гаврилова

Year: 1991 Journal: Surface Science Vol: 247 (1)Pages: 32-42 Publisher: Elsevier BV

DOI: 10.1016/0039-6028(91)90192-u

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Keywords:

Epitaxy Silicon Materials science Crystallography Mineralogy Analytical Chemistry (journal) Nanotechnology Chemistry Optoelectronics Layer (electronics)

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Surface and Thin Film Phenomena

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

The initial stages of NiSi2 epitaxy on clean Si(111), Si(100) and Si(110) surfaces

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