Growth kinetics of Si and SiGe on Si(100), Si(110) and Si(111) surfaces

Jean‐Michel Hartmann; M. Burdin; G. Rolland; T. Billon

doi:10.1016/j.jcrysgro.2006.06.043

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Growth kinetics of Si and SiGe on Si(100), Si(110) and Si(111) surfaces

Jean‐Michel Hartmann M. Burdin G. Rolland T. Billon

Year: 2006 Journal: Journal of Crystal Growth Vol: 294 (2)Pages: 288-295 Publisher: Elsevier BV

DOI: 10.1016/j.jcrysgro.2006.06.043

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Keywords:

Dichlorosilane Germane Torr Kinetics Chemistry Chemical vapor deposition Growth rate Analytical Chemistry (journal) Silicon Desorption Deposition (geology) Materials science Nanotechnology Physical chemistry Germanium Thermodynamics Adsorption

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

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Physical Sciences → Engineering → Electrical and Electronic Engineering

Growth kinetics of Si and SiGe on Si(100), Si(110) and Si(111) surfaces

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