JOURNAL ARTICLE

Physical properties of W2N thin films deposited by reactive magnetron sputtering

Abstract

W2N thin films were prepared by DC reactive magnetron sputtering. The optical and electrical properties of the obtained thin films were investigated. The transmission spectra of thin films of tungsten nitride (deposited on glass substrates) were analyzed. The optical band gap is determined. The electrical resistance of the films is analyzed.

Keywords:
Thin film Materials science Sputtering Sputter deposition Tungsten Optoelectronics Nitride Band gap Cavity magnetron Physical vapor deposition Wide-bandgap semiconductor Composite material Metallurgy Layer (electronics) Nanotechnology

Metrics

0
Cited By
0.00
FWCI (Field Weighted Citation Impact)
0
Refs
0.01
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Topics

Metal and Thin Film Mechanics
Physical Sciences →  Engineering →  Mechanics of Materials
GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics
Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
© 2026 ScienceGate Book Chapters — All rights reserved.