Physical properties of zirconium oxynitride films deposited by reactive magnetron sputtering

Abstract

The purpose of the present investigation is to analyze structural, optical, and electrical properties of transition zirconium oxynitride thin films deposited by direct current reactive magnetron sputtering. Films were prepared on Si(111) and glass substrates in an argon/nitrogen+oxygen atmosphere. The oxygen flow increased stepwise from 0 to 10 sccm, while at the same time the nitrogen flow decreased from 10 to 0 sccm. Working pressure was kept constant to reach 1.5·10-2 Pa pressure in the vacuum chamber by adjusting argon gas flow. Depending on the nitrogen-oxygen flow rates, cubic ZrN:O, cubic ZrO2:N, tetragonal ZrO2:N, and monoclinic ZrO2:N phases films were prepared. Optical and electrical properties depend on reactive gas (nitrogen+oxygen) flow. Refractive index vary from 2.13 to 2.38, band gap vary from 2.84 to 4.75. The electrical conductance of ZrNxOy films shows semiconductor-like behaviour.