PHYSICAL PROPERTIES OF (Al-Si-Cu)-N THIN FILMS DEPOSITED BY DC-REACTIVE MAGNETRON SPUTTERING

Abstract

In this work, the properties of (Al-Si-Cu)-N thin films prepared by D.C. Reactive Magnetron Sputtering were studied using different characterization techniques. The electrical properties of the obtained samples show that they are promising material in regard to the applications in microelectronics devices. The high resistivity and FTIR characteristics observed in the analyzed samples, indicate that the films are mostly consisted of Al-N bonds and that they are a prospective dielectric material.