ChemInform Abstract: Characterization of BCl3‐Cl2 Silicon Trench Etching.

A. Kassam; C. Meadowcroft; C.A.T. Salama; P. Ratnam

doi:10.1002/chin.199031331

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ChemInform Abstract: Characterization of BCl3‐Cl2 Silicon Trench Etching.

A. Kassam C. Meadowcroft C.A.T. Salama P. Ratnam

Year: 1990 Journal: ChemInform Vol: 21 (31) Publisher: Wiley

DOI: 10.1002/chin.199031331

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Abstract

Abstract The formation of trenches in silicon by means of a reactive ion etching (RIE) process using BCl 3 ‐Cl2 gas mixtures is studied as a function of the etching parameters (BCl3:Cl2 ratio, flow rate, etc.).

Keywords:

Chemistry Etching (microfabrication) Reactive-ion etching Trench Silicon Characterization (materials science) Deep reactive-ion etching Nanotechnology Analytical Chemistry (journal) Organic chemistry

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advanced Surface Polishing Techniques

Physical Sciences → Engineering → Biomedical Engineering

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

ChemInform Abstract: Characterization of BCl3‐Cl2 Silicon Trench Etching.

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