Characterization of BCl3 ‐ Cl2 Silicon Trench Etching

Abstract

A reactive ion etching (RIE) process used to generate trenches in silicon, using gas chemistry, is presented. Experimental results showing the dependence of trench characteristics on etch process parameters are discussed and an optimum recipe derived. Radiation damage caused by RIE and methods of reducing such damage to improve electrical characteristics of trenched capacitor structures are considered.