ChemInform Abstract: Anisotropic Reactive Ion Etching of Aluminum Using Cl2, BCl3, and CH4 Gases.

J. Lutze; A.H. Perera; J.P. Krusius

doi:10.1002/chin.199014346

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ChemInform Abstract: Anisotropic Reactive Ion Etching of Aluminum Using Cl2, BCl3, and CH4 Gases.

J. Lutze A.H. Perera J.P. Krusius

Year: 1990 Journal: ChemInform Vol: 21 (14) Publisher: Wiley

DOI: 10.1002/chin.199014346

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Abstract

Abstract A technique for anisotropically etching fine line patterns in aluminum films using the gas combination Cl2:BCl3:CH4 is developed in order to avoid the use of the strong carcinogens CCl 4 and CHCl 3 .

Keywords:

Chemistry Etching (microfabrication) Aluminium Reactive-ion etching Anisotropy Ion Line (geometry) Nanotechnology Organic chemistry Optics Geometry

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Copper Interconnects and Reliability

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Anodic Oxide Films and Nanostructures

Physical Sciences → Materials Science → Materials Chemistry

ChemInform Abstract: Anisotropic Reactive Ion Etching of Aluminum Using Cl2, BCl3, and CH4 Gases.

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