ChemInform Abstract: Anisotropic Reactive Ion Etching of MoSi2 and in situ Doped n+ and p+ Polysilicon Using Cl2 and BCl3.

T.C. Mele; S. Arney; J.P. Krusius; Noel C. MacDonald

doi:10.1002/chin.198852331

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ChemInform Abstract: Anisotropic Reactive Ion Etching of MoSi2 and in situ Doped n+ and p+ Polysilicon Using Cl2 and BCl3.

T.C. Mele S. Arney J.P. Krusius Noel C. MacDonald

Year: 1988 Journal: ChemInform Vol: 19 (52) Publisher: Wiley

DOI: 10.1002/chin.198852331

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Abstract

Abstract A high resolution Cl2/BCl3 reactive ion etch process is described that can be used to etch simultaneously composite structures of MoSi 2 and unannealed in situ doped polysilicon.

Keywords:

Chemistry In situ Reactive-ion etching Doping Etching (microfabrication) Ion Anisotropy Nanotechnology Optoelectronics Optics Materials science Organic chemistry

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

ChemInform Abstract: Anisotropic Reactive Ion Etching of MoSi2 and in situ Doped n+ and p+ Polysilicon Using Cl2 and BCl3.

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