The etching properties of Al2O3 thin films in N2/Cl2/BCl3 and Ar/Cl2/BCl3 gas chemistry

Seong-Mo Koo; Dong‐Pyo Kim; Kyoung‐Tae Kim; Chang-Il Kim

doi:10.1016/j.mseb.2004.12.029

ScienceGate Book Chapters

JOURNAL ARTICLE

The etching properties of Al2O3 thin films in N2/Cl2/BCl3 and Ar/Cl2/BCl3 gas chemistry

Seong-Mo Koo Dong‐Pyo Kim Kyoung‐Tae Kim Chang-Il Kim

Year: 2005 Journal: Materials Science and Engineering B Vol: 118 (1-3)Pages: 201-204 Publisher: Elsevier BV

DOI: 10.1016/j.mseb.2004.12.029

Get Full-Text PDF Get Analytical Report

Keywords:

Chemistry Plasma Analytical Chemistry (journal) Etching (microfabrication) Chamber pressure Plasma etching Thin film Inductively coupled plasma Plasma parameters Materials science Layer (electronics) Ion Nanotechnology Chromatography

Metrics

Cited By

0.46

FWCI (Field Weighted Citation Impact)

Refs

0.62

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Citation History

Topics

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Plasma Diagnostics and Applications

Physical Sciences → Engineering → Electrical and Electronic Engineering

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

The etching properties of Al2O3 thin films in N2/Cl2/BCl3 and Ar/Cl2/BCl3 gas chemistry

Metrics

Citation History

Topics

Related Documents

The etching properties of SBT thin films in BCl3/Cl2/Ar plasma

Temperature dependence on dry etching of Al2O3 thin films in BCl3/Cl2/Ar plasma

Characteristics of GaN thin films by inductively coupled plasma etching with Cl2/BCl3 and Cl2/Ar

Plasma etching of (Ba,Sr)TiO3 thin films using inductively coupled Cl2/Ar and BCl3/Cl2/Ar plasma

Etching properties of lead–zirconate–titanate thin films in Cl2/Ar and BCl3/Ar gas chemistries