JOURNAL ARTICLE

The etching properties of Al2O3 thin films in N2/Cl2/BCl3 and Ar/Cl2/BCl3 gas chemistry

Seong-Mo KooDong‐Pyo KimKyoung‐Tae KimChang-Il Kim

Year: 2005 Journal:   Materials Science and Engineering B Vol: 118 (1-3)Pages: 201-204   Publisher: Elsevier BV
Keywords:
Chemistry Plasma Analytical Chemistry (journal) Etching (microfabrication) Chamber pressure Plasma etching Thin film Inductively coupled plasma Plasma parameters Materials science Layer (electronics) Ion Nanotechnology Chromatography

Metrics

25
Cited By
0.46
FWCI (Field Weighted Citation Impact)
10
Refs
0.62
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics
Plasma Diagnostics and Applications
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
ZnO doping and properties
Physical Sciences →  Materials Science →  Materials Chemistry

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