JOURNAL ARTICLE

P‐21: Three‐Mask Elevated‐Metal Metal‐Oxide Thin‐Film Transistor Technology for High‐Resolution AMOLED Application

Jiapeng LiLei LüZhihe XiaSisi WangZhuoqun FengHoi Sing KwokMan Wong

Year: 2018 Journal:   SID Symposium Digest of Technical Papers Vol: 49 (1)Pages: 1256-1259   Publisher: Wiley

Abstract

Incorporated with the self‐aligned definition of the active island, a one‐mask‐reduced elevated‐metal metal‐oxide (EMMO) thin‐film transistor (TFT) with thermally‐induced source/drain regions was proposed for high‐resolution AMOLED application. Such three‐mask EMMO TFT combines the advantages of small device footprint, low manufacture cost, reduced overlap parasitic capacitance and good device characteristics.

Keywords:
Thin-film transistor AMOLED Materials science Transistor Optoelectronics Capacitance Metal Oxide Parasitic capacitance Electrical engineering Nanotechnology Electrode Active matrix Metallurgy Chemistry Voltage Engineering Layer (electronics)

Metrics

0
Cited By
0.00
FWCI (Field Weighted Citation Impact)
10
Refs
0.05
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Topics

Thin-Film Transistor Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Silicon and Solar Cell Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
© 2026 ScienceGate Book Chapters — All rights reserved.