P‐1.5: Edge Effects of Three‐Mask Elevated‐Metal Metal‐Oxide Thin‐Film Transistor and Their Elimination

Abstract

Based on the self‐aligned definition of the active island of a reduced‐mask elevated‐metal metal‐oxide thin‐film transistor with thermally‐induced source/drain regions, the potential issue of the insufficient passivation of the width‐wise edges of the channel has been investigated by varying the thickness of the etch‐stop layer thickness. A thinner etch‐stop layer ensured a better coverage of the edges by the passivation layer, hence eliminating the effects of the parasitic edge‐transistors.