High-performance and reliable elevated-metal metal-oxide thin-film transistor for high-resolution displays

Abstract

Incorporated with the annealing-induced source/drain (S/D), elevated-metal metal-oxide (EMMO) thin-film transistor (TFT) was proposed to provide an etch-stop (ES) layer while retain a small device size for high-resolution displays, which could not be combined in conventional TFT architectures. The 'defect-populated' S/D and 'defect-free' channel enabled the high performance metrics: a competitive field-effect mobility of ∼14 cm²/Vs; an extremely low off-current of ∼10^-18 A; an impressive on/off ratio of ∼10¹²; and the superior reliability against temperature, bias and current stresses.