8.1: Invited Paper: Enhanced Elevated‐Metal Metal‐Oxide Thin‐Film Transistor Technology

Abstract

Enhancement to the elevated‐metal metal‐oxide (EMMO) thin‐film transistor (TFT) architecture employing annealing‐induced source/drain regions is presently reported, thus further extending the advantage of EMMO over the conventional TFT architectures. The enhancement includes: a 3‐mask process resulting in a reduced mask‐count, hence manufacturing cost; a bottom‐gate self‐aligned process resulting in reduced parasitic overlap capacitance, hence signal delay; and a 3000‐°C process, with the lower temperature offering better compatibility with a wider range of flexible substrates.