PIEZORESISTIVE PRESSURE SENSORS BASED ON SILICON WHISKERS

Abstract

Complex studies aimed at the creating of piezoresistive pressure sensors based on silicon whiskers operating at cryogenic and high temperatures were carried out. The sensor’s design is based on the diaphragm — rod — beam system with the universal strain unit that, due to it’s universality, gives the possibility to create piezoresistive sensors to measure static and dynamic pressures from 100 kPa to 20 MPa operating in the wide temperature range.Developed method of silicon strain gauges, mounted by glass adhesive C51-1 on the spring elements of covar alloy provides the operating pressure sensors in the temperature range +20…+350°С. Pressure sensors based on boron doped silicon whiskers with resistivity 0,005 - 0,006 Оhm×сm, operating at low temperatures in the range -269...+20°С, and with boron concentration in the vicinity of metal-insulator transition (MIT) high sensitive liquid helium pressure sensors were created. Different pressure sensors for medical diagnostics were also developed.