Resistive Switching Characteristics of ZnO for Nonvolatile Memory Applications

Jr‐Hau He; Wen-Yuan Chang; Jr‐Jian Ke; José Ramón Durán Retamal

doi:10.1149/ma2012-01/16/733

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Resistive Switching Characteristics of ZnO for Nonvolatile Memory Applications

Jr‐Hau He Wen-Yuan Chang Jr‐Jian Ke José Ramón Durán Retamal

Year: 2012 Journal: ECS Meeting Abstracts Vol: MA2012-01 (16)Pages: 733-733 Publisher: Institute of Physics

DOI: 10.1149/ma2012-01/16/733

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Abstract

Abstract not Available.

Keywords:

Non-volatile memory Materials science Resistive touchscreen Optoelectronics Resistive random-access memory Electrical engineering Engineering physics Voltage Engineering

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Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electronic and Structural Properties of Oxides

Physical Sciences → Materials Science → Materials Chemistry

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Resistive Switching Characteristics of ZnO for Nonvolatile Memory Applications

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