Resistive switching characteristics of TiO2 thin films for nonvolatile memory applications

Pankaj Misra; Vikas Kumar Sahu

doi:10.1016/b978-0-323-89956-7.00007-3

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Resistive switching characteristics of TiO2 thin films for nonvolatile memory applications

Pankaj Misra Vikas Kumar Sahu

Year: 2022 Elsevier eBooks Pages: 413-451 Publisher: Elsevier BV

DOI: 10.1016/b978-0-323-89956-7.00007-3

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Keywords:

Resistive random-access memory Electroforming Materials science Non-volatile memory Switching time Reset (finance) Optoelectronics Memristor Voltage Electrical engineering Nanotechnology Engineering Layer (electronics)

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Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ferroelectric and Negative Capacitance Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electronic and Structural Properties of Oxides

Physical Sciences → Materials Science → Materials Chemistry

Resistive switching characteristics of TiO2 thin films for nonvolatile memory applications

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