Resistive switching characteristics of sol-gel derived ZrCeOx thin films for nonvolatile memory applications

You-Shen Wu; Meng‐Hung Tsai; Cheng‐Liang Huang

doi:10.1016/j.mseb.2022.115605

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Resistive switching characteristics of sol-gel derived ZrCeOx thin films for nonvolatile memory applications

You-Shen Wu Meng‐Hung Tsai Cheng‐Liang Huang

Year: 2022 Journal: Materials Science and Engineering B Vol: 277 Pages: 115605-115605 Publisher: Elsevier BV

DOI: 10.1016/j.mseb.2022.115605

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Keywords:

Materials science Annealing (glass) Thermal conduction Amorphous solid Sol-gel Ohmic contact Thin film Ion Resistive random-access memory Optoelectronics Electrode Protein filament Electrical conductor Conductivity Nanotechnology Composite material Chemistry Crystallography

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Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

Transition Metal Oxide Nanomaterials

Physical Sciences → Materials Science → Polymers and Plastics

Gas Sensing Nanomaterials and Sensors

Physical Sciences → Engineering → Electrical and Electronic Engineering

Resistive switching characteristics of sol-gel derived ZrCeOx thin films for nonvolatile memory applications

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