Resistive switching characteristics of Sm2O3 thin films for nonvolatile memory applications

Sheng-Yao Huang; Ting‐Chang Chang; Min-Chen Chen; Shih-Ching Chen; Hung-Ping Lo; Hui‐Chun Huang; Dershin Gan; Simon M. Sze; Ming‐Jinn Tsai

doi:10.1016/j.sse.2011.04.012

JOURNAL ARTICLE

Resistive switching characteristics of Sm2O3 thin films for nonvolatile memory applications

Sheng-Yao Huang Ting‐Chang Chang Min-Chen Chen Shih-Ching Chen Hung-Ping Lo Hui‐Chun Huang Dershin Gan Simon M. Sze Ming‐Jinn Tsai

Year: 2011 Journal: Solid-State Electronics Vol: 63 (1)Pages: 189-191 Publisher: Elsevier BV

DOI: 10.1016/j.sse.2011.04.012

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Keywords:

Non-volatile memory Materials science Resistive random-access memory Ohmic contact Optoelectronics Thermal conduction Thin film Electrical conductor High resistance Data retention Space charge Resistive touchscreen Degradation (telecommunications) Electrical engineering Composite material Nanotechnology Voltage Electron Physics

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Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ferroelectric and Negative Capacitance Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electronic and Structural Properties of Oxides

Physical Sciences → Materials Science → Materials Chemistry

Resistive switching characteristics of Sm2O3 thin films for nonvolatile memory applications

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