JOURNAL ARTICLE
The Study of GaN and InGaN Metal-Semiconductor-Metal Photodetectors with Different Schottky Contact Metals
Keywords:
Materials science Photodetector Optoelectronics Schottky barrier Semiconductor Metal Schottky diode Wide-bandgap semiconductor Metallurgy
Metrics
0
Cited By
0.00
FWCI (Field Weighted Citation Impact)
0
Refs
0.23
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Topics
GaN-based semiconductor devices and materials
Physical Sciences → Physics and Astronomy → Condensed Matter Physics
Related Documents
JOURNAL ARTICLE
GaN and InGaN Metal-Semiconductor-Metal Photodetectors with Different Schottky Contact Metals
Yan-Kuin SuYu-Zung ChiouFuh‐Shyang JuangShoou-Jin ChangJinn‐Kong Sheu
Journal: Japanese Journal of Applied Physics Year: 2001 Vol: 40 (4S)Pages: 2996-2996
JOURNAL ARTICLE
High Performance ZnSe-Based Metal–Semiconductor–Metal Ultraviolet Photodetectors with Different Schottky Contacts
Vadim P. SirkeliOktay YilmazogluAhid S. HajoNatalia NedeogloD. D. NedeogloFranko KüppersH. L. Hartnagel
Journal: Physics of the Solid State Year: 2024 Vol: 66 (8)Pages: 257-264
JOURNAL ARTICLE
InGaN Metal-Semiconductor-Metal Photodetectors With Aluminum Nitride Cap Layers
Kai-Hsuan LeeP. C. ChangShoou-Jinn ChangSan-Lein Wu
Journal: IEEE Journal of Quantum Electronics Year: 2011 Vol: 47 (8)Pages: 1107-1112
JOURNAL ARTICLE
InGaAs metal-semiconductor-metal photodetectors with engineered Schottky barrier heights
W. WohlmuthM. ArafaA. MahajanPatrick FayI. Adesida
Journal: Applied Physics Letters Year: 1996 Vol: 69 (23)Pages: 3578-3580