GaN and InGaN Metal-Semiconductor-Metal Photodetectors with Different Schottky Contact Metals

Abstract

The characterizations of n-type doped GaN, p-type doped GaN and n-type doped In 0.2 Ga 0.8 N Schottky metal-semiconductor-metal (MSM) photodetectors were reported. The epilayers were grown on sapphire by metalorganic chemical vapor deposition (MOVCD). Schottky contacts were fabricated using Au, Ti, Ni and Pt metals. The dark and illuminated current–voltage characteristics of GaN and InGaN MSM photodetectors with different Schottky metals were studied. The n-GaN MSM photodetectors with Au Schottky contacts showed better responsivity than those with other metals and they were also better than Au/p-GaN and Ti/n-In 0.2 Ga 0.8 N MSMs. The effects of the pitch width between the interdigitate fingers and the thickness of Schottky metals on the characteristics of photocurrents were also studied.