InGaN/GaN metal-semiconductor-metal photodetectors with hafnium oxide cap layer

S.M. Wang; T. P. Chen; Shoou‐Jinn Chang; Po-Chun Chang; Sheng‐Joue Young; Hao‐Chang Hung; Ming-Gu Lin

doi:10.1109/isdrs.2009.5378295

ScienceGate Book Chapters

JOURNAL ARTICLE

InGaN/GaN metal-semiconductor-metal photodetectors with hafnium oxide cap layer

S.M. Wang T. P. Chen Shoou‐Jinn Chang Po-Chun Chang Sheng‐Joue Young Hao‐Chang Hung Ming-Gu Lin

Year: 2009 Pages: 1-2

DOI: 10.1109/isdrs.2009.5378295

Get Full-Text PDF Get Analytical Report

Keywords:

Materials science Optoelectronics Hafnium Layer (electronics) Wide-bandgap semiconductor Metal Photodetector Semiconductor Metallurgy Nanotechnology Zirconium

Metrics

Cited By

0.00

FWCI (Field Weighted Citation Impact)

Refs

0.06

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Topics

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Photocathodes and Microchannel Plates

Physical Sciences → Engineering → Biomedical Engineering

InGaN/GaN metal-semiconductor-metal photodetectors with hafnium oxide cap layer

Metrics

Topics

Related Documents

GaN Metal–Semiconductor–Metal Photodetectors With SiN/GaN Nucleation Layer

GaN metal–semiconductor interface and its applications in GaN and InGaN metal–semiconductor–metal photodetectors

GaN and InGaN Metal-Semiconductor-Metal Photodetectors with Different Schottky Contact Metals

GaN Metal-Semiconductor-Metal Photodetectors with an un-activated Mg-doped GaN Cap Layer

InGaN metal-semiconductor-metal photodetectors with triethylgallium precursor and unactivated Mg-doped GaN cap layers