High Performance ZnSe-Based Metal–Semiconductor–Metal Ultraviolet Photodetectors with Different Schottky Contacts

Vadim P. Sirkeli; Oktay Yilmazoglu; Ahid S. Hajo; Natalia Nedeoglo; D. D. Nedeoglo; Franko Küppers; H. L. Hartnagel

doi:10.1134/s1063783424601164

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High Performance ZnSe-Based Metal–Semiconductor–Metal Ultraviolet Photodetectors with Different Schottky Contacts

Vadim P. Sirkeli Oktay Yilmazoglu Ahid S. Hajo Natalia Nedeoglo D. D. Nedeoglo Franko Küppers H. L. Hartnagel

Year: 2024 Journal: Physics of the Solid State Vol: 66 (8)Pages: 257-264 Publisher: Pleiades Publishing

DOI: 10.1134/s1063783424601164

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Keywords:

Materials science Photodetector Ultraviolet Optoelectronics Semiconductor Metal Schottky diode Schottky barrier Solid-state physics Metallurgy Condensed matter physics

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

High Performance ZnSe-Based Metal–Semiconductor–Metal Ultraviolet Photodetectors with Different Schottky Contacts

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