Defect Reduction in Si-based Metal-Semiconductor-Metal Photodetectors with Cryogenic Processed Schottky Contacts

M. Li; Wayne A. Anderson

doi:10.1557/proc-864-e9.39

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Defect Reduction in Si-based Metal-Semiconductor-Metal Photodetectors with Cryogenic Processed Schottky Contacts

M. Li Wayne A. Anderson

Year: 2005 Journal: MRS Proceedings Vol: 864 Publisher: Cambridge University Press

DOI: 10.1557/proc-864-e9.39

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Keywords:

Materials science Schottky diode Schottky barrier Dark current Optoelectronics Photodetector Passivation Electrode Metal–semiconductor junction Semiconductor Diode Layer (electronics) Nanotechnology

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Defect Reduction in Si-based Metal-Semiconductor-Metal Photodetectors with Cryogenic Processed Schottky Contacts

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