Ultra high aspect ratio sub-micron silicon micromachining by double-passivation deep reactive ion etching

Ranganathan Nagarajan; B. Ramana Murthy

doi:10.7567/ssdm.2006.a-3-3

ScienceGate Book Chapters

JOURNAL ARTICLE

Ultra high aspect ratio sub-micron silicon micromachining by double-passivation deep reactive ion etching

Ranganathan Nagarajan B. Ramana Murthy

Year: 2006

DOI: 10.7567/ssdm.2006.a-3-3

Get Full-Text PDF Get Analytical Report

Keywords:

Materials science Deep reactive-ion etching Passivation Reactive-ion etching Surface micromachining Etching (microfabrication) Silicon Bulk micromachining Optoelectronics Microelectromechanical systems Aspect ratio (aeronautics) Nanotechnology Fabrication

Metrics

Cited By

0.00

FWCI (Field Weighted Citation Impact)

Refs

0.35

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Topics

Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advanced Surface Polishing Techniques

Physical Sciences → Engineering → Biomedical Engineering

Ultra high aspect ratio sub-micron silicon micromachining by double-passivation deep reactive ion etching

Metrics

Topics

Related Documents

Reactive ion etching for high aspect ratio silicon micromachining

Deep reactive ion etching of sub-micrometer trenches with ultra high aspect ratio

High aspect ratio deep silicon etching

Ultra high aspect-ratio and thick deep silicon etching (UDRIE)

An advanced reactive ion etching process for very high aspect-ratio sub-micron wide trenches in silicon