Deep reactive ion etching of sub-micrometer trenches with ultra high aspect ratio

Jayalakshmi Parasuraman; Anand Summanwar; Frédéric Marty; Philippe Basset; Dan Angelescu; Tarik Bourouina

doi:10.1016/j.mee.2013.06.010

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Deep reactive ion etching of sub-micrometer trenches with ultra high aspect ratio

Jayalakshmi Parasuraman Anand Summanwar Frédéric Marty Philippe Basset Dan Angelescu Tarik Bourouina

Year: 2013 Journal: Microelectronic Engineering Vol: 113 Pages: 35-39 Publisher: Elsevier BV

DOI: 10.1016/j.mee.2013.06.010

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Keywords:

Deep reactive-ion etching Aspect ratio (aeronautics) Micrometer Trench Etching (microfabrication) Materials science Figure of merit Reactive-ion etching Optoelectronics Isotropic etching Nanotechnology Optics Physics

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Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Plasma Diagnostics and Applications

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Deep reactive ion etching of sub-micrometer trenches with ultra high aspect ratio

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