An advanced reactive ion etching process for very high aspect-ratio sub-micron wide trenches in silicon

Reza Abdolvand; Farrokh Ayazi

doi:10.1016/j.sna.2007.12.026

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An advanced reactive ion etching process for very high aspect-ratio sub-micron wide trenches in silicon

Reza Abdolvand Farrokh Ayazi

Year: 2008 Journal: Sensors and Actuators A Physical Vol: 144 (1)Pages: 109-116 Publisher: Elsevier BV

DOI: 10.1016/j.sna.2007.12.026

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Keywords:

Passivation Deep reactive-ion etching Etching (microfabrication) Materials science Reactive-ion etching Trench Argon Silicon Sputtering Layer (electronics) Optoelectronics Nanotechnology Thin film Chemistry

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Plasma Diagnostics and Applications

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

An advanced reactive ion etching process for very high aspect-ratio sub-micron wide trenches in silicon

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