Transient Photoconductivity in GaAs Films Grown by Molecular Beam Epitaxy.

A. Werner; T. D. Moustakas; M. Kunst

doi:10.1557/proc-145-461

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Transient Photoconductivity in GaAs Films Grown by Molecular Beam Epitaxy.

A. Werner T. D. Moustakas M. Kunst

Year: 1989 Journal: MRS Proceedings Vol: 145 Publisher: Cambridge University Press

DOI: 10.1557/proc-145-461

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Keywords:

Microsecond Materials science Impurity Photoconductivity Molecular beam epitaxy Electron Excitation Recombination Doping Cathode ray Silicon Atomic physics Analytical Chemistry (journal) Optoelectronics Epitaxy Optics Chemistry Nanotechnology Physics

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Near-Field Optical Microscopy

Physical Sciences → Engineering → Biomedical Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Transient Photoconductivity in GaAs Films Grown by Molecular Beam Epitaxy.

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