Photoconductivity and photoluminescence of GaAs grown on Si by molecular beam epitaxy

G. Bernier; J. Beerens; J. De Boeck; W. De Raedt; Chris Van Hoof; G. Borghs

doi:10.1016/0038-1098(89)90819-3

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Photoconductivity and photoluminescence of GaAs grown on Si by molecular beam epitaxy

G. Bernier J. Beerens J. De Boeck W. De Raedt Chris Van Hoof G. Borghs

Year: 1989 Journal: Solid State Communications Vol: 69 (7)Pages: 727-731 Publisher: Elsevier BV

DOI: 10.1016/0038-1098(89)90819-3

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Keywords:

Molecular beam epitaxy Photoluminescence Photoconductivity Thermal expansion Materials science Valence (chemistry) Epitaxy Condensed matter physics Chemistry Optoelectronics Analytical Chemistry (journal) Layer (electronics) Nanotechnology Composite material Physics

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electron and X-Ray Spectroscopy Techniques

Physical Sciences → Materials Science → Surfaces, Coatings and Films

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Photoconductivity and photoluminescence of GaAs grown on Si by molecular beam epitaxy

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