Photoluminescence in CdTe grown on GaAs substrates by molecular beam epitaxy

Abstract

Single-crystal epitaxial layers of (100) and (111) oriented CdTe were grown on (100) oriented GaAs substrates by molecular beam epitaxy. Low-temperature (4.2 K) photoluminescence spectra exhibit free-exciton and bound-exciton peaks having linewidths on the order of 2 meV for both CdTe crystallographic orientations. However, defect-related photoluminescence is found to be stronger in (100) oriented CdTe.