Photoluminescence properties of Pb1−xSnxTe/CdTe quantum wells grown on (100)-oriented GaAs substrates by molecular beam epitaxy

Kazuto Koike; T. Hotei; Ryou Kawaguchi; Mitsuaki Yano

doi:10.1016/j.jcrysgro.2008.10.112

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Photoluminescence properties of Pb1−xSnxTe/CdTe quantum wells grown on (100)-oriented GaAs substrates by molecular beam epitaxy

Kazuto Koike T. Hotei Ryou Kawaguchi Mitsuaki Yano

Year: 2008 Journal: Journal of Crystal Growth Vol: 311 (7)Pages: 2102-2105 Publisher: Elsevier BV

DOI: 10.1016/j.jcrysgro.2008.10.112

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Keywords:

Photoluminescence Molecular beam epitaxy Quantum well Cadmium telluride photovoltaics Epitaxy Optoelectronics Materials science Condensed matter physics Atmospheric temperature range Optics Nanotechnology Physics Laser

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Advanced Semiconductor Detectors and Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electronic and Structural Properties of Oxides

Physical Sciences → Materials Science → Materials Chemistry

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Photoluminescence properties of Pb1−xSnxTe/CdTe quantum wells grown on (100)-oriented GaAs substrates by molecular beam epitaxy

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