HgTe-CdTe superlattices grown on GaAs (100) oriented substrates by molecular beam epitaxy

Abstract

HgTe-CdTe superlattices have been grown on GaAs (100) substrates by molecular beam epitaxy. X-ray diffraction analysis shows the superlattices to be single crystalline with well defined periods. Temperature-dependent infrared absorbance measurements indicate that the superlattices have band gaps with positive temperature coefficients. The band-gap temperature dependence is in semiquantitative agreement with theoretical calculations.