JOURNAL ARTICLE
HgTe–CdTe superlattices grown on lattice-mismatched GaAs substrates
M. L. WrogeD. J. LeopoldJ. M. BallingallD. J. PetermanB. J. MorrisJ. G. BroermanF. A. PonceG. B. Anderson
Year: 1986 Journal: Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena Vol: 4 (6)Pages: 1306-1309 Publisher: AIP Publishing
Abstract
HgTe–CdTe superlattices were grown by molecular beam epitaxy on GaAs(100) substrates with CdTe buffer layers. The large (14.6%) lattice mismatch between CdTe and GaAs is relieved by a two-dimensional array of misfit dislocations with a period of 3.1 nm. X-ray diffraction, infrared transmittance, and Hall effect measurements are reported for thick (>5 μm) single crystalline superlattices.
Keywords:
Superlattice Cadmium telluride photovoltaics Molecular beam epitaxy Materials science Diffraction Optoelectronics Lattice (music) Condensed matter physics Transmittance Epitaxy Infrared Optics Nanotechnology Physics Layer (electronics)
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0
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0.93
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Citation History
Topics
Advanced Semiconductor Detectors and Materials
Physical Sciences → Engineering → Electrical and Electronic Engineering
Semiconductor Quantum Structures and Devices
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Quantum Dots Synthesis And Properties
Physical Sciences → Materials Science → Materials Chemistry
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