on GaAs grown by molecular beam epitaxy

S. Sivananthan; L. Wang; R. Sporken; J. Chen; B. J. Skromme; David J. Smith

doi:10.1016/0022-0248(95)00856-x

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on GaAs grown by molecular beam epitaxy

S. Sivananthan L. Wang R. Sporken J. Chen B. J. Skromme David J. Smith

Year: 1996 Journal: Journal of Crystal Growth Vol: 159 (1-4)Pages: 94-98 Publisher: Elsevier BV

DOI: 10.1016/0022-0248(95)00856-x

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Keywords:

X-ray photoelectron spectroscopy Molecular beam epitaxy Photoluminescence Heterojunction Band gap Superlattice Transmission electron microscopy Materials science Stoichiometry Epitaxy Analytical Chemistry (journal) Crystallography Chemistry Optoelectronics Nuclear magnetic resonance Nanotechnology Layer (electronics) Physics

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Quantum Dots Synthesis And Properties

Physical Sciences → Materials Science → Materials Chemistry

Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

on GaAs grown by molecular beam epitaxy

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