JOURNAL ARTICLE

on GaAs grown by molecular beam epitaxy

S. SivananthanL. WangR. SporkenJ. ChenB. J. SkrommeDavid J. Smith

Year: 1996 Journal:   Journal of Crystal Growth Vol: 159 (1-4)Pages: 94-98   Publisher: Elsevier BV
Keywords:
X-ray photoelectron spectroscopy Molecular beam epitaxy Photoluminescence Heterojunction Band gap Superlattice Transmission electron microscopy Materials science Stoichiometry Epitaxy Analytical Chemistry (journal) Crystallography Chemistry Optoelectronics Nuclear magnetic resonance Nanotechnology Layer (electronics) Physics

Metrics

18
Cited By
1.29
FWCI (Field Weighted Citation Impact)
6
Refs
0.77
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Quantum Dots Synthesis And Properties
Physical Sciences →  Materials Science →  Materials Chemistry
Chalcogenide Semiconductor Thin Films
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics

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