GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy

A. Yu. Egorov; A. E. Zhukov; A. R. Kovsh; V. M. Ustinov; V. V. Mamutin; С. В. Иванов; В. Н. Жмерик; A. F. Tsatsul’nikov; D. A. Bedarev; P. S. Kop’ev

doi:10.1134/1.1262326

JOURNAL ARTICLE

GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy

A. Yu. Egorov A. E. Zhukov A. R. Kovsh V. M. Ustinov V. V. Mamutin С. В. Иванов В. Н. Жмерик A. F. Tsatsul’nikov D. A. Bedarev P. S. Kop’ev

Year: 1998 Journal: Technical Physics Letters Vol: 24 (12)Pages: 942-944 Publisher: Pleiades Publishing

DOI: 10.1134/1.1262326

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Abstract

Molecular beam epitaxy was used to fabricate GaAsN/GaAs and InGaAsN/GaAs heterostructures, and the influence of the growth regimes on their characteristics was studied. It is shown that implantation of nitrogen causes a substantial long-wavelength shift of the radiation. The possibility of obtaining 1.4 μm radiation at room temperature was demonstrated using In0.28Ga0.72As0.97N0.03/GaAs quantum wells.

Keywords:

Molecular beam epitaxy Heterojunction Materials science Optoelectronics Epitaxy Nanotechnology

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Semiconductor Lasers and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy

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