Challenges of High Aspect Ratio Oxide Etching

Daniel Koehler; Dominik Fischer

doi:10.1149/1.3035366

ScienceGate Book Chapters

JOURNAL ARTICLE

Challenges of High Aspect Ratio Oxide Etching

Daniel Koehler Dominik Fischer

Year: 2008 Journal: ECS Transactions Vol: 13 (8)Pages: 47-54 Publisher: Institute of Physics

DOI: 10.1149/1.3035366

Get Full-Text PDF Get Analytical Report

Abstract

Plasma etch processes for fabrication of contact holes in SiO2 with aspect ratios of 20:1 and beyond were successfully developed. Both etch rates and profile control mechanisms were investigated in depth. Profile bowing, potato-shaped cross-sections, and increase of length to width ratio were identified to be the limiting factors in patterning of high aspect ratio holes in SiO2. Solutions for bow reduction and the handling of length to width ratio were developed and successfully implemented.

Keywords:

Aspect ratio (aeronautics) Bowing Limiting Etching (microfabrication) Fabrication Materials science Oxide Plasma etching Nanotechnology Composite material Optoelectronics Metallurgy Mechanical engineering Engineering

Metrics

Cited By

0.48

FWCI (Field Weighted Citation Impact)

Refs

0.70

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Citation History

Topics

Advanced Surface Polishing Techniques

Physical Sciences → Engineering → Biomedical Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Metal and Thin Film Mechanics

Physical Sciences → Engineering → Mechanics of Materials

Challenges of High Aspect Ratio Oxide Etching

Abstract

Metrics

Citation History

Topics

Related Documents

Challenges of High Aspect Ratio Oxide Etching

High Aspect Ratio Si Etching

Faster, Smaller, Deeper: the Challenges of High Aspect Ratio Etching

Selective Plasma Etching for High-Aspect-Ratio Oxide Contact Holes

Ultra Low Temperature High Aspect Ratio Oxide Punch Through Etching