Graded SiGe-Channel Modulation-Doped p-Mosfets

S. Verdonckt-Vandebroek; E.F. Crabbé; B.S. Meyerson; D.L. Harame; P.J. Restle; J.M.C. Stork; A.C. Megdanis; C. Stanis; A. A. Bright; G. M. W. Kroesen; A.C. Warren

doi:10.1109/vlsit.1991.706012

JOURNAL ARTICLE

Graded SiGe-Channel Modulation-Doped p-Mosfets

S. Verdonckt-Vandebroek E.F. Crabbé B.S. Meyerson D.L. Harame P.J. Restle J.M.C. Stork A.C. Megdanis C. Stanis A. A. Bright G. M. W. Kroesen A.C. Warren

Year: 1991 Pages: 105-106

DOI: 10.1109/vlsit.1991.706012

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Abstract

Bandgap engineering has been applied to the design and fabrication of graded SiGe-channel modulation-doped p-MOSFETs. The Ge in the channel was graded to control the location of carrier flow and hence optimize the transconductance.

Keywords:

Transconductance Modulation (music) Materials science Fabrication Optoelectronics Doping Channel (broadcasting) MOSFET Electronic engineering Electrical engineering Engineering Transistor Physics Voltage Acoustics

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Carbide Semiconductor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Graded SiGe-Channel Modulation-Doped p-Mosfets

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