Si/SiGe p-Channel MOSFETs

Abstract

High quality Si1~xGex p-channel MOSFETs have been fabricated in an integrable process using both thermal or PECVD gate oxides and selective UHV CVD for the Si/Si1 - x Gex channels. We show that optimally designed Si/Si1-xGex MOSFETs exhibit up to 7-% higher transconductance at 300K than control Si p-channel devices. Si/SiGe p-channel devices with thermal and PECVD gate oxides show comparable device characteristics.