JOURNAL ARTICLE

Simulations of Scaled Sub-100 nm Strained Si/SiGe p-Channel MOSFETs

L. X. YangJ.R. WatlingM. BoriçiR.C.W. WilkinsA. AsenovJohn R. BarkerS. Roy

Year: 2003 Journal:   Journal of Computational Electronics Vol: 2 (2-4)Pages: 363-368   Publisher: Springer Science+Business Media
Keywords:
MOSFET Materials science Optoelectronics Channel (broadcasting) Short-channel effect Scaling IBM Doping Electronic engineering Transistor Electrical engineering Nanotechnology Engineering Voltage Mathematics

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Topics

Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Advancements in Semiconductor Devices and Circuit Design
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Silicon Carbide Semiconductor Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
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