Simulations of Scaled Sub-100 nm Strained Si/SiGe p-Channel MOSFETs

L. X. Yang; J.R. Watling; M. Boriçi; R.C.W. Wilkins; A. Asenov; John R. Barker; S. Roy

doi:10.1023/b:jcel.0000011453.70902.07

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Simulations of Scaled Sub-100 nm Strained Si/SiGe p-Channel MOSFETs

L. X. Yang J.R. Watling M. Boriçi R.C.W. Wilkins A. Asenov John R. Barker S. Roy

Year: 2003 Journal: Journal of Computational Electronics Vol: 2 (2-4)Pages: 363-368 Publisher: Springer Science+Business Media

DOI: 10.1023/b:jcel.0000011453.70902.07

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Keywords:

MOSFET Materials science Optoelectronics Channel (broadcasting) Short-channel effect Scaling IBM Doping Electronic engineering Transistor Electrical engineering Nanotechnology Engineering Voltage Mathematics

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Simulations of Scaled Sub-100 nm Strained Si/SiGe p-Channel MOSFETs

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